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Shenzhen Hongxinwei Technology Co., Ltd

Shenzhen Hongxinwei Technology Co., Ltd To adopt new technology,to produce products of quality,to offer high-class service.

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Home / Products / Electronic Integrated Circuits / BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW /

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Electronic Integrated Circuits

 [307]

IGBT Module

 [38]

GPS Module

 [3]

3G Module

 [3]

CCD CMOS Sensor

 [16]

Quectel Module

 [2]

2G Module

 [3]

IGBT Driver

 [7]

TE Relay

 [10]

GSM GPRS Module

 [6]

IP Camera Soc

 [12]

LTE 4G Module

 [7]

Motor Cooling Fan

 [8]

Switching Power Supply

 [22]

PCB Prototype

 [11]

PCB Assembly

 [9]
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Shenzhen Hongxinwei Technology Co., Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:Mr段
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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
  • BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
  • BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
Products Detailed
BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz ...
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Product Tags:
channel igbt toshiba semiconductor rfp70n06 mosfet igbt semiconductor

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