Shenzhen Hongxinwei Technology Co., Ltd

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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

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Shenzhen Hongxinwei Technology Co., Ltd
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:Mr段
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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

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Brand Name :Infineon Technologies
Model Number :BF999 E6327
Certification :ROHS
Place of Origin :CHINA
MOQ :10PCS
Price :NEGOTIABLE
Payment Terms :T/T, Western Union
Supply Ability :12000PCS/WEEK
Delivery Time :2-3DAYS
Packaging Details :3000PCS/REEL
Transistor Polarity :N-Channel
Technology :Si
Id - Continuous Drain Current :30 A
Vds - Drain-Source Breakdown Voltage :20 V
Minimum Operating Temperature :- 55 C
Maximum Operating Temperature :+ 150 C
Height :1 mm
Length :2.9 mm
Width :1.3 mm
Pd - Power Dissipation :200mW
Vgs - Gate-Source Voltage :6.5 V
Factory Pack Quantity :3000
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BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode

1.Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications
• Pb-free (RoHS compliant) package1)

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

2.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

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