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Shenzhen Hongxinwei Technology Co., Ltd

City:shenzhen

Province/State:guangdong

Country/Region:china

Contact Person:Mr段

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China AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT wholesale

AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

Name: AUIRG4PH50S Infineon IGBT Transistors 1200V DC1 KHZ STD DISCRETE AUTO IGBT
Brand: Infineon
Price: 1 USD

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Brand Name :Infineon

Model Number :AUIRG4PH50S

Certification :ROHS

Place of Origin :TAIWAN

MOQ :10PCS

Price :NEGOTIABLE

Payment Terms :T/T, Western Union

Supply Ability :10000PCS/WEEK

Delivery Time :2-3DAYS

Packaging Details :400PCS/BOX TUBE

Product Category :IGBT Transistors

Technology :Si

Mounting Style :Through Hole

Configuration :Single

Collector- Emitter Voltage VCEO Max :1.2 kV

Collector-Emitter Saturation Voltage :1.47 V

Maximum Gate Emitter Voltage :- 20 V, + 20 V

Continuous Collector Current at 25 C :141 A

Pd - Power Dissipation :543 W

Minimum Operating Temperature :- 55 C

Maximum Operating Temperature :+ 150 C

Height :20.7 mm

Length :15.87 mm

Width :5.31 mm

Factory packaging quantity :400PCS/BOX

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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

1.FEATURES

Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *

2.BENEFITS

Generation 4 IGBT's offer highest efficiency available

IGBT's optimized for specified application conditions

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