Shenzhen Hongxinwei Technology Co., Ltd
Shenzhen Hongxinwei Technology Co., Ltd To adopt new technology,to produce products of quality,to offer high-class service.
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1.Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
2.Description
These N-channel Power MOSFETs are developed using STMicroelectronics'revolutionary MDmesh technology, which associates the multiple drain process withthe company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamicperformance which is superior to similar products on the market
3.Applications
Switching applications
