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Shenzhen Hongxinwei Technology Co., Ltd

City:shenzhen

Province/State:guangdong

Country/Region:china

Contact Person:Mr段

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China 2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel wholesale

2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel

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Brand Name :ON

Model Number :FDS6679AZ

Certification :ROHS

Place of Origin :CHINA

MOQ :10PCS

Price :NEGOTIABLE

Payment Terms :T/T, Western Union

Supply Ability :10000PCS/WEEK

Delivery Time :2-3DAYS

Packaging Details :2500PC/REEL

Technology :Si

Transistor Polarity :P-Channel

Number of Channels :1 Channel

Vds - Drain-Source Breakdown Voltage :30 V

Id - Continuous Drain Current :13 A

Rds On - Drain-Source Resistance :9.3 mOhms

Vgs - Gate-Source Voltage :- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage :3 V

Qg - Gate Charge :96 nC

Minimum Operating Temperature :- 55 C

Maximum Operating Temperature :+ 150 C

Pd - Power Dissipation :2.5W

Height :1.75 mm

Length :4.9 mm

Transistor Type :1P Channel

Width :3.9 mm

Fall Time :92 ns

Rise Time :15 ns

Typical Turn-Off Delay Time :210 ns

Typical Turn-On Delay Time :13 ns

Factory Pack Quantity :2500

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FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant

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