Shenzhen Hongxinwei Technology Co., Ltd
Shenzhen Hongxinwei Technology Co., Ltd To adopt new technology,to produce products of quality,to offer high-class service.
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FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
1.Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
2.Features
RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
3.Applications
Battery Protection
Load Switch
Power Management
4.SwitchingTest Circuit
5.TSSOP-8L Dimension
6.Why choose us?
100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service